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Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs

Wang Yong Liu Dandan Feng Guoqing Ye Zhen Gao Zhanqi Wang Xiaohua

半导体学报（英文版）2015，Vol.36Issue(3)：141-143,3.

半导体学报（英文版）2015，Vol.36Issue(3)：141-143,3.DOI:10.1088/1674-4926/36/3/036002

Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs

Wang Yong ¹Liu Dandan ¹Feng Guoqing ¹Ye Zhen ¹Gao Zhanqi ¹Wang Xiaohua¹

作者信息

1. National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
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摘要

关键词

GaAs/ ohmic contact/ diffusion barrier layer

Key words

GaAs/ ohmic contact/ diffusion barrier layer

引用本文复制引用

Wang Yong,Liu Dandan,Feng Guoqing,Ye Zhen,Gao Zhanqi,Wang Xiaohua..Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs[J].半导体学报（英文版）,2015,36(3):141-143,3.

基金项目

Project supported by the National Natural Science Foundation of China (No.11474036),and the National Key Laboratory of High Power Semiconductor Lasers Foundations (No.9140C310103120C31114). （No.11474036）

半导体学报（英文版）

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ISSN：1674-4926

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