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Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut(R)technology

Wang Bing Gu Bin Pan Rongying Zhang Sijia Shen Jianhua

半导体学报(英文版)2015,Vol.36Issue(3):144-149,6.
半导体学报(英文版)2015,Vol.36Issue(3):144-149,6.DOI:10.1088/1674-4926/36/3/036003

Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut(R)technology

Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut(R)technology

Wang Bing 1Gu Bin 1Pan Rongying 1Zhang Sijia 1Shen Jianhua1

作者信息

  • 1. Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology-Ministry of Education, School of Manufacturing Science and Engineering, Southwest University of Science and Technology,Mianyang 621010, China
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摘要

关键词

Smart-Cut(R)/ molecular dynamics/ hydrogen implantation/ defect density

Key words

Smart-Cut(R)/ molecular dynamics/ hydrogen implantation/ defect density

引用本文复制引用

Wang Bing,Gu Bin,Pan Rongying,Zhang Sijia,Shen Jianhua..Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut(R)technology[J].半导体学报(英文版),2015,36(3):144-149,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.11372261),the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province (No.2013JQ0030),the Supporting Project of Department of Education of Sichuan Province (No.2014zd3132),the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education (No.12zxzk02),the Fund of Doctoral Research of Southwest University of Science and Technology (No.12zx7106),and the Postgraduate Innovation Fund Project of Southwest University of Science and Technology (No.14ycxjj0121). (No.11372261)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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