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Electric dipole formation at high-k dielectric/SiO2 interface

Han Kai Wang Xiaolei Yang Hong Wang Wenwu

半导体学报（英文版）2015，Vol.36Issue(3)：150-152,3.

半导体学报（英文版）2015，Vol.36Issue(3)：150-152,3.DOI:10.1088/1674-4926/36/3/036004

Electric dipole formation at high-k dielectric/SiO2 interface

Han Kai ¹Wang Xiaolei ²Yang Hong ²Wang Wenwu²

作者信息

1. Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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摘要

关键词

high-k dielectric/ band alignment/ interface dipole

Key words

high-k dielectric/ band alignment/ interface dipole

引用本文复制引用

Han Kai,Wang Xiaolei,Yang Hong,Wang Wenwu..Electric dipole formation at high-k dielectric/SiO2 interface[J].半导体学报（英文版）,2015,36(3):150-152,3.

基金项目

Project supported by the National Natural Science Foundation of China (No.61404093),and the Doctoral Scientific Research Foundation of Weifang University (No.2014BS02). （No.61404093）

半导体学报（英文版）

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ISSN：1674-4926

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