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首页|期刊导航|半导体学报(英文版)|The effect of multi-intermediate bands on the behavior of an InAS1-xNx/GaAS1-ySby quantum dot solar cell

The effect of multi-intermediate bands on the behavior of an InAS1-xNx/GaAS1-ySby quantum dot solar cell

Abou El-Maaty M.Aly A.Nasr

半导体学报(英文版)2015,Vol.36Issue(4):1-6,6.
半导体学报(英文版)2015,Vol.36Issue(4):1-6,6.DOI:10.1088/1674-4926/36/4/042001

The effect of multi-intermediate bands on the behavior of an InAS1-xNx/GaAS1-ySby quantum dot solar cell

The effect of multi-intermediate bands on the behavior of an InAS1-xNx/GaAS1-ySby quantum dot solar cell

Abou El-Maaty M.Aly 1A.Nasr2

作者信息

  • 1. Power Electronics and Energy Conversion Department, ERI, NRCB, Egypt
  • 2. College of Computer, Qassim University, P.O.B.6688, Buryadah 51453, Kingdom of Saudi Arabia
  • 折叠

摘要

关键词

intermediate bands/solar cells/quantum dots/efficiency/solar concentration

Key words

intermediate bands/solar cells/quantum dots/efficiency/solar concentration

引用本文复制引用

Abou El-Maaty M.Aly,A.Nasr..The effect of multi-intermediate bands on the behavior of an InAS1-xNx/GaAS1-ySby quantum dot solar cell[J].半导体学报(英文版),2015,36(4):1-6,6.

半导体学报(英文版)

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1674-4926

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