半导体学报（英文版）2015，Vol.36Issue(4)：40-43,4.DOI:10.1088/1674-4926/36/4/044002
Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique
Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique
Paragjyoti Gogoi 1Rajib Saikia 1Sanjib Changmai1
作者信息
- 1. Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar-785665, Assam, India
- 折叠
摘要
关键词
chemical bath deposition/thin film transistors/electrical propertiesKey words
chemical bath deposition/thin film transistors/electrical properties引用本文复制引用
Paragjyoti Gogoi,Rajib Saikia,Sanjib Changmai..Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique[J].半导体学报（英文版）,2015,36(4):40-43,4.
