半导体学报（英文版）2015，Vol.36Issue(4)：44-50,7.DOI:10.1088/1674-4926/36/4/044003
Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs
Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs
Mini Bhartia 1Arun Kumar Chatterjee1
作者信息
- 1. Electronics and Communication Department, Thapar Institute of Engineering and Technology, Patiala, India
- 折叠
摘要
关键词
double gate MOSFET/2D potential distribution model/drain current modelKey words
double gate MOSFET/2D potential distribution model/drain current model引用本文复制引用
Mini Bhartia,Arun Kumar Chatterjee..Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs[J].半导体学报（英文版）,2015,36(4):44-50,7.
