半导体学报（英文版）2015，Vol.36Issue(4)：66-69,4.DOI:10.1088/1674-4926/36/4/044007
Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs
Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs
Xu Miao 1Yin Huaxiang 1Zhu Huilong 1Ma Xiaolong 1Xu Weijia 1Zhang Yongkui 1Zhao Zhiguo1
作者信息
- 1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- 折叠
摘要
关键词
bulk FinFET/effective work function (EWF)/extension thermal budget/metal gateKey words
bulk FinFET/effective work function (EWF)/extension thermal budget/metal gate引用本文复制引用
Xu Miao,Yin Huaxiang,Zhu Huilong,Ma Xiaolong,Xu Weijia,Zhang Yongkui,Zhao Zhiguo..Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs[J].半导体学报（英文版）,2015,36(4):66-69,4.
