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Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods

Ren Dan Xu Xiaoyu Qu Hui Ren Zhuoxiang

半导体学报（英文版）2015，Vol.36Issue(4)：151-157,7.

半导体学报（英文版）2015，Vol.36Issue(4)：151-157,7.DOI:10.1088/1674-4926/36/4/045008

Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods

Ren Dan ¹Xu Xiaoyu ²Qu Hui ¹Ren Zhuoxiang³

作者信息

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
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摘要

关键词

capacitance extraction/dual discrete geometric methods/energy complementary/electrostatic field

Key words

capacitance extraction/dual discrete geometric methods/energy complementary/electrostatic field

引用本文复制引用

Ren Dan,Xu Xiaoyu,Qu Hui,Ren Zhuoxiang..Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods[J].半导体学报（英文版）,2015,36(4):151-157,7.

基金项目

Project supported by the National Science Foundation of China (No.51207150),and the Director Foundation of Institute of Microelectronics of Chinese Academy of Sciences (Nos.Y2SF017001,Y3SZ0701). （No.51207150）

半导体学报（英文版）

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ISSN：1674-4926

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