半导体学报（英文版）2015，Vol.36Issue(4)：180-184,5.DOI:10.1088/1674-4926/36/4/046001
A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs
A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs
Feng Shuai 1Zhao Lichuan 2Zhang Qingzhu 2Yang Pengpeng 1Tang Zhaoyun 2Wu Cinan 1Yan Jiang2
作者信息
- 1. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
- 2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- 折叠
摘要
关键词
implanted doping/in situ doping/TCAD simulation/PMOSFETsKey words
implanted doping/in situ doping/TCAD simulation/PMOSFETs引用本文复制引用
Feng Shuai,Zhao Lichuan,Zhang Qingzhu,Yang Pengpeng,Tang Zhaoyun,Wu Cinan,Yan Jiang..A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs[J].半导体学报（英文版）,2015,36(4):180-184,5.
