A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETsOACSCDCSTPCD
A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs
Feng Shuai;Zhao Lichuan;Zhang Qingzhu;Yang Pengpeng;Tang Zhaoyun;Wu Cinan;Yan Jiang
College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaCollege of Big Data and Information Engineering, Guizhou University, Guiyang 550025, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaCollege of Big Data and Information Engineering, Guizhou University, Guiyang 550025, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
implanted dopingin situ dopingTCAD simulationPMOSFETs
implanted dopingin situ dopingTCAD simulationPMOSFETs
《半导体学报（英文版）》 2015 (4)
180-184,5
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