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High power laser diodes of 2μm AlGaAsSb/InGaSb type I quantum-wells

Liao Yongping Zhang Yu Xing Junliang Wei Sihang Hao Hongyue Wang Guowei Xu Yingqiang

半导体学报（英文版）2015，Vol.36Issue(5)：50-53,4.

半导体学报（英文版）2015，Vol.36Issue(5)：50-53,4.DOI:10.1088/1674-4926/36/5/054007

High power laser diodes of 2μm AlGaAsSb/InGaSb type I quantum-wells

Liao Yongping ¹Zhang Yu ²Xing Junliang ¹Wei Sihang ²Hao Hongyue ¹Wang Guowei ²Xu Yingqiang¹

作者信息

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China,Hefei 230026, China
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摘要

关键词

laser diodes/arrays/emitters/quantum wells

Key words

laser diodes/arrays/emitters/quantum wells

引用本文复制引用

Liao Yongping,Zhang Yu,Xing Junliang,Wei Sihang,Hao Hongyue,Wang Guowei,Xu Yingqiang..High power laser diodes of 2μm AlGaAsSb/InGaSb type I quantum-wells[J].半导体学报（英文版）,2015,36(5):50-53,4.

基金项目

Project supported by the National Basic Research Program of China (Nos.2014CB643903,2013CB932904,2011CB922201),the National Special Funds for the Development of Major Research Equipment and Instruments,China (No.2012YQ140005),the National Natural Science Foundation of China (Nos.61274013,U1037602,61290303),and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (No.XDB01010200). （Nos.2014CB643903,2013CB932904,2011CB922201）

半导体学报（英文版）

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ISSN：1674-4926

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