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Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode

Zheng Chunlei Pu Hongbin Li Hong Chen Zhiming

半导体学报（英文版）2015，Vol.36Issue(5)：58-60,3.

半导体学报（英文版）2015，Vol.36Issue(5)：58-60,3.DOI:10.1088/1674-4926/36/5/054009

Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode

Zheng Chunlei ¹Pu Hongbin ¹Li Hong ¹Chen Zhiming¹

作者信息

1. Xi'an University of Technology, Department of Electronic Engineering, Xi'an 710048, China
折叠

摘要

关键词

β-FeSi2/magnetron sputtering/p-β-FeSi2/n-4H-SiC heterojunction/photoelectric properties

Key words

β-FeSi2/magnetron sputtering/p-β-FeSi2/n-4H-SiC heterojunction/photoelectric properties

引用本文复制引用

Zheng Chunlei,Pu Hongbin,Li Hong,Chen Zhiming..Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode[J].半导体学报（英文版）,2015,36(5):58-60,3.

基金项目

Project supported by the National Natural Science Foundation of China (No.51177134). （No.51177134）

半导体学报（英文版）

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ISSN：1674-4926

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