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Modeling and analysis of the HPM pulse-width upset effect on CMOS inverter

Yu Xinhai Chai Changchun Qiao Liping Yang Yintang Liu Yang Xi Xiaowen

半导体学报（英文版）2015，Vol.36Issue(5)：66-71,6.

半导体学报（英文版）2015，Vol.36Issue(5)：66-71,6.DOI:10.1088/1674-4926/36/5/054011

Modeling and analysis of the HPM pulse-width upset effect on CMOS inverter

Yu Xinhai ¹Chai Changchun ¹Qiao Liping ¹Yang Yintang ¹Liu Yang ¹Xi Xiaowen¹

作者信息

1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China
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摘要

关键词

complementary metal oxide semiconductor/upset/high power microwave/pulse-width

Key words

complementary metal oxide semiconductor/upset/high power microwave/pulse-width

引用本文复制引用

Yu Xinhai,Chai Changchun,Qiao Liping,Yang Yintang,Liu Yang,Xi Xiaowen..Modeling and analysis of the HPM pulse-width upset effect on CMOS inverter[J].半导体学报（英文版）,2015,36(5):66-71,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.60776034) and the State Key Development Program for Basic Research of China (No.2014CB339900). （No.60776034）

半导体学报（英文版）

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ISSN：1674-4926

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