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Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

Zhao Danmei Zhao Degang Jiang Desheng Liu Zongshun Zhu Jianjun Chen Ping Liu Wei

半导体学报（英文版）2015，Vol.36Issue(6)：21-24,4.

半导体学报（英文版）2015，Vol.36Issue(6)：21-24,4.DOI:10.1088/1674-4926/36/6/063003

Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

Zhao Danmei ¹Zhao Degang ¹Jiang Desheng ¹Liu Zongshun ¹Zhu Jianjun ¹Chen Ping ¹Liu Wei¹

作者信息

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
折叠

摘要

关键词

GaN/crack/MOCVD

Key words

GaN/crack/MOCVD

引用本文复制引用

Zhao Danmei,Zhao Degang,Jiang Desheng,Liu Zongshun,Zhu Jianjun,Chen Ping,Liu Wei..Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon[J].半导体学报（英文版）,2015,36(6):21-24,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61474110,61377020,61376089,61223005,61176126),and the National Science Fund for Distinguished Young Scholars (No.60925017). （Nos.61474110,61377020,61376089,61223005,61176126）

半导体学报（英文版）

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ISSN：1674-4926

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