Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)SiOACSCDCSTPCD

作者：Feng Shuai;Zhao Lichuan;Zhang Qingzhu;Yang Pengpeng;Tang Zhaoyun;Yan Jiang;Wu Cinan

作者单位：Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, ChinaCollege of Big Data and Information Engineering, Guizhou University, Guiyang 550025, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, ChinaCollege of Big Data and Information Engineering, Guizhou University, Guiyang 550025, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China

中文关键词：silicidethermal stabilitycarbon implantRTA

英文关键词：silicidethermal stabilitycarbon implantRTA

刊名：《半导体学报（英文版）》 2015 (6)

页码/页数：25-28,4

DOI：10.1088/1674-4926/36/6/063004