半导体学报（英文版）2015，Vol.36Issue(6)：58-63,6.DOI:10.1088/1674-4926/36/6/064005
Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis
Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis
Moumita Mukherjee 1P.R.Tripathy 2S.P.Pati3
作者信息
- 1. Centre for MM-wave Semiconductor Devices and Systems(CMSDS), DRDO, Kolkata 700009, West Bengal, India
- 2. Hi-Tech College of Engineering, Bhubaneswar, Odisha, India
- 3. Former Professor of Sambalpur University, Jyoti Vihar, Burla, Sambalpur, Odisha, India
- 折叠
摘要
关键词
Si/SiC hetero-structure double drift diode/full-scale large-signal modelling/high-power/parasitic effects/noise-analysisKey words
Si/SiC hetero-structure double drift diode/full-scale large-signal modelling/high-power/parasitic effects/noise-analysis引用本文复制引用
Moumita Mukherjee,P.R.Tripathy,S.P.Pati..Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis[J].半导体学报（英文版）,2015,36(6):58-63,6.
