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Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

Wang Zhiming Huang Hui Hu Zhifu Zhao Zhuobin Wang Xudong Luo Xiaobin Liu Jun

半导体学报（英文版）2015，Vol.36Issue(6)：64-67,4.

半导体学报（英文版）2015，Vol.36Issue(6)：64-67,4.DOI:10.1088/1674-4926/36/6/064006

Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

Wang Zhiming ¹Huang Hui ²Hu Zhifu ³Zhao Zhuobin ¹Wang Xudong ¹Luo Xiaobin ³Liu Jun¹

作者信息

1. Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, China
2. National Institute of Metrology, Beijing 100029, China
3. Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
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摘要

关键词

on-wafer/calibration/scattering parameters/PHEMTs/small-signal model

Key words

on-wafer/calibration/scattering parameters/PHEMTs/small-signal model

引用本文复制引用

Wang Zhiming,Huang Hui,Hu Zhifu,Zhao Zhuobin,Wang Xudong,Luo Xiaobin,Liu Jun..Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J].半导体学报（英文版）,2015,36(6):64-67,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.61275107). （No.61275107）

半导体学报（英文版）

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ISSN：1674-4926

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