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Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates

Zhao Qifeng Zhuang Yiqi Bao Junlin Hu Wei

半导体学报（英文版）2015，Vol.36Issue(6)：68-71,4.

半导体学报（英文版）2015，Vol.36Issue(6)：68-71,4.DOI:10.1088/1674-4926/36/6/064007

Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates

Zhao Qifeng ¹Zhuang Yiqi ¹Bao Junlin ¹Hu Wei²

作者信息

1. School of Microelectronics, Xidian University, Xi'an 710071, China
2. School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China
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摘要

关键词

radiation/bipolar junction transistors/current gain degradation/model

Key words

radiation/bipolar junction transistors/current gain degradation/model

引用本文复制引用

Zhao Qifeng,Zhuang Yiqi,Bao Junlin,Hu Wei..Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates[J].半导体学报（英文版）,2015,36(6):68-71,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61076101,61204092). （Nos.61076101,61204092）

半导体学报（英文版）

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ISSN：1674-4926

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