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Characteristics of HfO2/Hf-based bipolar resistive memories

Bi Jinshun Han Zhengsheng

半导体学报（英文版）2015，Vol.36Issue(6)：80-84,5.

半导体学报（英文版）2015，Vol.36Issue(6)：80-84,5.DOI:10.1088/1674-4926/36/6/064010

Bi Jinshun ¹Han Zhengsheng¹

作者信息

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
折叠

hafnium dioxide/bipolar/resistive random-access-memory/conductive filament/quantum point contact model

hafnium dioxide/bipolar/resistive random-access-memory/conductive filament/quantum point contact model

Bi Jinshun,Han Zhengsheng..Characteristics of HfO2/Hf-based bipolar resistive memories[J].半导体学报（英文版）,2015,36(6):80-84,5.

Project supported by the National Natural Science Foundation of China (Nos.11179003,61176095). （Nos.11179003,61176095）

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ISSN：1674-4926

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