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Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV

Tanu Goyal Manoj Kumar Majumder Brajesh Kumar Kaushik

半导体学报(英文版)2015,Vol.36Issue(6):99-104,6.
半导体学报(英文版)2015,Vol.36Issue(6):99-104,6.DOI:10.1088/1674-4926/36/6/065001

Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV

Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV

Tanu Goyal 1Manoj Kumar Majumder 2Brajesh Kumar Kaushik2

作者信息

  • 1. Department of ECE, IEC College of Engineering and Technology, UP, India
  • 2. Department of E&CE, Indian Institute of Technology Roorkee, Uttarakhand, India
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摘要

关键词

carbon nanotube/through-silicon vias/equivalent RLC circuit model/propagation delay/power-delay product/area-delay product

Key words

carbon nanotube/through-silicon vias/equivalent RLC circuit model/propagation delay/power-delay product/area-delay product

引用本文复制引用

Tanu Goyal,Manoj Kumar Majumder,Brajesh Kumar Kaushik..Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV[J].半导体学报(英文版),2015,36(6):99-104,6.

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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