北华大学学报（自然科学版）Issue(5)：697-700,4.DOI:10.11713/j.issn.1009-4822.2014.05.032
一种互补式LVTSCR的CMOS芯片ESD保护方法
ESD Protection Method of CMOS Chips Based on LVTSCR
申莎莎1
作者信息
- 1. 运城学院物理与电子工程系，山西 运城 044000
- 折叠
摘要
Abstract
This paper presents a new type of complementary LVTSCR structure for ESD protection of CMOS chips. It describes the circuit model of the transverse section and the equivalent circuit, and then analyzes the working principles. It proves the feasibility of the structure and compares it with the existing ESD protection structure. ISE-TCAD tools are used for the simulation experiments, which shows that the structure occupies smaller area and has a high protection efficiency per unit area.关键词
ESD保护/可控硅/CMOS集成电路/LVTSCRKey words
ESD protection/SCR/CMOS Ics/LVTSCR分类
信息技术与安全科学引用本文复制引用
申莎莎..一种互补式LVTSCR的CMOS芯片ESD保护方法[J].北华大学学报（自然科学版）,2014,(5):697-700,4.
