表面技术Issue(4)：11-16,6.
阳极钝化电位对黄铜表面钝化膜半导体性能的影响
Semi-conducting Property of Passive Film Formed on Brass under Different Passivation Potential
摘要
Abstract
Objective To investigate the semi-conducting property of passive films formed on brass under different passivation potential. Methods The passivation range of brass in borate buffer solution was obtained by potentiodynamic polarization curves, and three passivation potentials were chosen. The electrochemical impedance spectroscopy and Mott-Schottky theory were used,and the diffusion coefficient of passive film was calculated using PDM. Results The brass showed obvious passivation state in borate buffer solution. The Mott-Schottky plots were linear with a negative slop. With the passivation potential moving towards positive, the film impedance increased, the acceptor density and the flat potential decreased, the space charge layer thickness increased, and the order of magnitude of point defect diffusion coefficient was 10-14 . Conclusion Under different passivation potential, the passive films on the brass surface showed the property of p-type semiconductor, the majority of the carriers in the passive film were holes. With the passivation potential moving towards positive, the conductivity of the film decreased and the corrosion resistance was improved, resulting in better protection.关键词
黄铜/钝化电位/钝化膜/半导体/Mott-Schottky分析Key words
brass/passivation potential/passive film/semiconductor/Mott-Schottky分类
矿业与冶金引用本文复制引用
孟新静,周琼宇,钟庆东..阳极钝化电位对黄铜表面钝化膜半导体性能的影响[J].表面技术,2014,(4):11-16,6.基金项目
国家自然科学基金资助项目(50571059,50615024) （50571059,50615024）
教育部新世纪优秀人才支持计划资助项目(NCET-07-0536)Fund：Supported by the National Natural Science Foundation of China(50571059,50615024) and the New Century Excellent Talents Supporting Plan of the Ministry of Education(NCET-07-0536) （NCET-07-0536）
