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工艺参数对磁控溅射制备TiO2薄膜结晶性的影响

张盼盼 丁龙先 张帅拓

表面技术Issue(5):48-52,101,6.
表面技术Issue(5):48-52,101,6.DOI:10.16490/j.cnki.issn.1001-3660.2015.05.009

工艺参数对磁控溅射制备TiO2薄膜结晶性的影响

Effects of Process Parameters on Crystalline TiO2 Thin Films Prepared by Magnetron Sputtering

张盼盼 1丁龙先 1张帅拓1

作者信息

  • 1. 沈阳大学,沈阳110044
  • 折叠

摘要

Abstract

ABSTRACT:Objective To explore the pattern between the crystallization of TiO2 thin films and the process parameters. Methods The process conditions ( the position of the sample, sputtering power, oxygen partial pressure, the bogie, deposition temperature and annealing) were modified by the DC reactive magnetron sputtering method to prepare TiO2 thin films on the common slide glass substrate. TiO2 thin films under different process parameters were analyzed by XRD and SEM. Results In the case of fixed target-substrate distance, simply changing the sample suspension position had little influence on thin-film crystalline. As the sputtering power increased within a certain range, the film crystalline became better and better ( tending to anatase crystal) . Crystalline of the thin film whose oxygen partial pressure was 10% was better than that whose pressure was 5%. The thin film crystalline was superi-or when the turntable was not opened, compared to when the turntable was opened. Deposition temperature ( shifting between 300℃ and 350 ℃) made no difference to thin film crystalline. Crystalline of thin film annealed was superior to that not annealed. Conclusion Sample suspension position and deposition temperature have little effect on the crystalline property of TiO2 films. Oxy-gen partial pressure and opening of turntable have some impacts on the crystalline property of TiO2 films. Sputtering power and an-nealing have a greater influence on the crystallization of TiO2 thin film, the rutile crystal diffraction peaks appear after being an-nealed.

关键词

磁控溅射/工艺参数/TiO2 薄膜/结晶性

Key words

magnetron sputtering/process parameters/TiO2 thin films/crystalline property

分类

矿业与冶金

引用本文复制引用

张盼盼,丁龙先,张帅拓..工艺参数对磁控溅射制备TiO2薄膜结晶性的影响[J].表面技术,2015,(5):48-52,101,6.

表面技术

OA北大核心CSCDCSTPCD

1001-3660

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