表面技术Issue(7)：45-49,5.DOI:10.16490/j.cnki.issn.1001-3660.2015.07.009
Mn掺杂SiC基稀磁半导体薄膜的结构和磁性研究
Investigation of Structure and Magnetic Properties of Mn-doped SiC Dilute Magnetic Semiconductors
摘要
Abstract
ABSTRACT:Objective To investigate the magnetic origin of Mn-doped SiC films from the atom level. Methods The films of Mn-doped SiC were fabricated by radio frequency-magnetron sputtering. The structure, components and magnetic properties of films were investigated by X-ray diffraction ( XRD) , X-ray photoelectron spectroscopy ( XPS) , X-ray absorption fine structure ( XAFS) and physical property measuring system ( PPMS) , respectively. Results The analysis of crystal structure and composition showed that the structure of 3C-SiC was formed in the films after 1200 ℃ anneal, and with the increasing of Mn content, the characteristic peaks of 3C-SiC moved to lower angle. In 3%, 5% and 7% Mn-doped SiC films, the doping Mn atoms existed in the form of Mn2+ions, but in 9% Mn-doped SiC film, the second phase of compound Mn4 Si7 appeared. The study of local structure of films showed that there were no Mn clusters or Mn-related oxides. The doped Mn atoms existed in the form of substitution for C sites in 3C-SiC lattice in 3%, 5% and 7% Mn-doped SiC films, and in 9% Mn-doped SiC film there was a coexistence of C substitution and com-pound Mn4 Si7 . The magnetic measurement by PPMS showed that the Mn-doped SiC films were ferromagnetic at room temperature, and the saturation magnetization increased with the increasing of Mn content. Conclusion The magnetism of films is intrinsic and relevant to the defects caused by Mn in the form of Mn2+substituted for C in 3C-SiC lattice and is accorded with the bound magnetic polarons ( BMP) mechanism accused by defects.关键词
磁控溅射/SiC/Mn掺杂/铁磁性/缺陷Key words
magnetron sputtering/SiC/Mn-doped/ferromagnetism/defect分类
矿业与冶金引用本文复制引用
孙现科,周小东,周思华,王少辉,蒋卫华,孙春梅..Mn掺杂SiC基稀磁半导体薄膜的结构和磁性研究[J].表面技术,2015,(7):45-49,5.基金项目
国家自然科学基金资助项目(11405280) （11405280）
河南省教育厅科学技术研究重点项目(14B140021) （14B140021）
周口师范学院博士科研启动经费资助项目(zksybscx201210) Fund：Supported by the National Natural Science Foundation of China (11405280) （zksybscx201210）
Education Department of Henan (14B140021) （14B140021）
Startup Foundation for Doctors of Zhoukou Normal University (zksybscx201210) （zksybscx201210）
