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基于牺牲层技术的高过载压力传感器芯片∗

揣荣岩 王健 代全 杨理践

传感技术学报Issue(12):1615-1621,7.
传感技术学报Issue(12):1615-1621,7.DOI:10.3969/j.issn.1004-1699.2014.12.006

基于牺牲层技术的高过载压力传感器芯片∗

A Chip of High Overload Pressure Sensor Based on Sacrificial Layer Technology

揣荣岩 1王健 1代全 2杨理践1

作者信息

  • 1. 沈阳工业大学信息科学与工程学院,沈阳110870
  • 2. 沈阳化工大学信息工程学院,沈阳110142
  • 折叠

摘要

Abstract

A chip of high overload pressure sensor based on sacrificial layer technology is presented. The sensor takes advantages of polysilicon mechanical and polysilicon nanofilm piezoresistive characteristics to increase its full scale output and overload capacity. A simulation model of the proposed sensor is designed by finite element analysis. With the analyses of static and nonlinear contact for stress distribution on the sensor membrane,a design method is proposed to improve the pressure sensor full scale output and overload capacity. And a 2.5MPa full scale pressure sensor sample is developed. The sample measurement results show that an overpressure of 7 times higher than full scale pressure,a full scale output voltage of 362 mV under a supply voltage of 5 V are achieved.

关键词

压力传感器/过载保护/牺牲层技术/多晶硅纳米膜

Key words

pressure sensor/overload protection/sacrificial layer technology/polysilicon nanofilm

分类

信息技术与安全科学

引用本文复制引用

揣荣岩,王健,代全,杨理践..基于牺牲层技术的高过载压力传感器芯片∗[J].传感技术学报,2014,(12):1615-1621,7.

基金项目

国家自然科学基金项目(61372019) (61372019)

传感技术学报

OA北大核心CSCDCSTPCD

1004-1699

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