传感技术学报Issue(5)：660-664,5.DOI:10.3969/j.issn.1004-1699.2015.05.009
Si基多层Ge量子点近红外光电探测器研制∗
Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector
摘要
Abstract
The structure of multilayer Ge quantum dots( QDs) was eptaxial grown on Si substrate by ultra-high vacu-um chemical vapor deposition( UHV/CVD) technique for detector fabrication. The intrinsic multilayer Ge QDs were acted as an absorption region,while the N-Si substrate and the in situ capped P-Si layer were chosen for the forma-tion of ohmic contact. The fabricated photodetector has a low dark current density(7.35×10-6 A/cm2 at -1 V),and the wavelength limit is extended to 1.31 μm compared with Si photodetector.关键词
多层Ge量子点/近红外光电探测器/UHV/CVD系统/自组织生长Key words
multilayer Ge QDs/near-infrared photodetector/UHV/CVD system/self-assembled growth分类
信息技术与安全科学引用本文复制引用
汪建元,陈松岩,李成..Si基多层Ge量子点近红外光电探测器研制∗[J].传感技术学报,2015,(5):660-664,5.基金项目
国家重大科学研究计划(2012CB933503) （2012CB933503）
