Journal of Changshu Institute of TechnologyIssue(4)：51-54,4.
Co-Pi和Cu2O共修饰TiO2薄膜及其光电化学性质研究
Fabrication and Photoelectrochemical Properties of Co-Pi and Cu2O Co-decorated TiO2 films
摘要
Abstract
TiO2 film is prepared on Ti substrates by anodic oxidation method. Then Co-Pi and Cu2O particles are fabricated on TiO2 flat surface using a facial electrochemical deposition method. Scanning electron microsco-py, X-ray diffraction and photoelectrochemical properties reflect that depositing Co-Pi particles in advance on the surface of TiO2 thin films can prevent Cu2O forming stacked particle structure, increase the photocurrent sig-nificantly, and deposit Co-Pi after Cu2O makes Cu2O reduction to Cu and that at the same time the morphology changes a lot. Specifically, when the deposition time of Co-Pi is set to be 300 s, the structure of TiO2/Co-Pi/Cu2O can get the maximum photocurrent of 200 A cm-2 .关键词
TiO2薄膜/Co-Pi/Cu2O/电化学沉积/光电化学性质Key words
Titatium oxide film/Co-Pi/Cuprous oxide/electrochemical deposition method/photoelectrochemi-cal properties分类
化学化工引用本文复制引用
姜春香,沈明荣..Co-Pi和Cu2O共修饰TiO2薄膜及其光电化学性质研究[J].Journal of Changshu Institute of Technology,2014,(4):51-54,4.基金项目
高等学校博士学科点专项科研基金（博导类）资助项目“Cu2O过渡层提高PZT铁电梯度薄膜光电转换效率的研究” （）
