摘要
Abstract
On the basis of project application , one kind of driver circuit for SiC MOSFET was discussed according to the requirements of 50kW/1MHz high power SiC MOSFET circuit , and the switching characteristics of SiC MOSFET . Through researching the process of opening the characteristics of SiC MOSFET in detail , come to make its reliable , safe driving requirements , to improve it in Si MOSFET driver circuit-based applications on existing mature , research for the job in the megahertz range of SiC MOSFET driver circuit .The basic characteristics of the driver circuit using double-pulse experiments verify the basic characteristics of designed driver circuit and determine the optimal parame -ters of the gate resistance .关键词
SiC MOSFET/开关特性/驱动电路/双脉冲实验Key words
SiC MOSFET/switching characteristics/driver circuit/double-pulse experiment分类
信息技术与安全科学
