电子学报Issue(5)：907-910,4.DOI:10.3969/j.issn.0372-2112.2015.05.011
基于最优控制电压的高鲁棒性 PUF 电路设计
Design of Highly Robust PUF Based on the Optimal Gate Voltage
摘要
Abstract
Physical Unclonable Functions (PUF) ,as a kind of innovative secure circuits ,extract key relying upon the intrin-sic process variations in silicon devices .This paper proposes a scheme of highly robust PUF .First ,we analyze the properties of the MOSFET working at the point of Zero Temperature Coefficient .And then we determine the structure and the optimal gate voltage of PUF by combining the approaches that improve the robustness of PUF circuits .All of which lead to the goal of making the keys sta-ble and reliable at last .This design is implemented in TSMC 65nm CMOS technology and the layout area occupies 14.89μm × 12.14μm .The simulation results show that the reliability of PUF is not less than 96% ,which is better than other PUF circuits .关键词
物理不可克隆函数/零温度系数点/鲁棒性/电路设计Key words
physical unclonable functions/zero temperature coefficient/robustness/circuit design分类
信息技术与安全科学引用本文复制引用
汪鹏君,张学龙,张跃军..基于最优控制电压的高鲁棒性 PUF 电路设计[J].电子学报,2015,(5):907-910,4.基金项目
国家自然科学基金（No ．61274132，No ．61474068，No ．61234002）；博士点基金（No ．20113305110005）；浙江省自然科学基金 （）
