电源学报Issue(4)：46-52,7.DOI:10.13234/j.issn.2095-2805.2015.4.46
一种有限差分IGBT/FWD模型研究
Studies on a Finite Difference IGBT/FWD Model
摘要
Abstract
A novel finite difference modeling method for various structures of insulated gate bipolar transistor/free wheeling diode(IGBT/FWD) chips is presented. The novel model has high accuracy, high calculation speed and stable convergence. The method can be extended to characterize the temperature effect of IGBT/FWD. After developing the models of IGBT/FWD chips, double-pulse tests were conducted and thus verified the accuracy of the presented method under different ambient temperatures. To improve the testing quality, a novel current measuring method with a bayonet nut connector and sampling resistors was introduced in the tests.关键词
有限差分模型/电流测量/IGBTKey words
finite difference model/current measurement/insulated gate bipolar transistor(IGBT)分类
信息技术与安全科学引用本文复制引用
孟金磊,宁圃奇,温旭辉,张栋..一种有限差分IGBT/FWD模型研究[J].电源学报,2015,(4):46-52,7.基金项目
国家科技支撑计划课题项目（2013BAG02B01）Project Supported by National Science & Technology Pillar Program （）
