电子器件Issue(3)：441-444,4.DOI:10.3969/j.issn.1005-9490.2014.03.014
X波段GaN五位数字移相器MMIC的设计
Design of an X-Band GaN 5 bit Digital Phase Shifter MMIC
张霍 1马佩军 2罗卫军 1姜元祺 2刘新宇3
作者信息
- 1. 西安电子科技大学微电子学院，西安710071
- 2. 西安电子科技大学微电子学院宽禁带半导体材料与器件国家重点实验室，西安710071
- 3. 中国科学院微电子研究所微电子器件与集成技术重点实验室，北京100029
- 折叠
摘要
Abstract
An X band 5 bit Digital phase shifter monolithic microwave integrated circuit ( MMIC ) is designed using 0. 5 μm GaN HEMT process. The design procedure is described, and the layout electromagnetic simulation is operated. The phase shifter is based on the synthetic design of a high-pass/low-pass filters network and the loaded-line structure. A switch topology of the phase shifter is designed by matching network, which reduced the loss insertion of GaN device from 14 dB to 1 dB. The layout simulation result shows that the phase shifter has achieved root mean square(RMS)phase shift error less than 3. 5,the average insertion loss of 17. 4 dB,and the return loss better than -12 dB within 9. 2 GHz~10. 2 GHz bandwidth. The layout size is 5. 0 mmí4. 7 mm.关键词
射频电路设计/仿真/数字移相器/X波段/氮化镓/单片微波集成电路Key words
radio-frequency circuit design/simulation/digital phase shifter/X-band/GaN/MMIC分类
信息技术与安全科学引用本文复制引用
张霍,马佩军,罗卫军,姜元祺,刘新宇..X波段GaN五位数字移相器MMIC的设计[J].电子器件,2014,(3):441-444,4.
