电子器件Issue(4)：587-590,4.DOI:10.3969/j.issn.1005-9490.2014.04.001
深亚微米大容量PROM芯片ESD保护技术
ESD Protection Technology for Deep Submicron Mass PROM IC
裴国旭 1邓玉良 1樊利慧 1李晓辉 1彭锦军1
作者信息
- 1. 深圳市国微电子股份有限公司，广东 深圳518057
- 折叠
摘要
Abstract
The ESD protection circuit design of PROMs is introduced based on 0. 18μm CMOS process. From a whole-chip’s point of view, the whole chip is protected in the round using multiple power and whole-chip ESD protection design. At the same time,the high voltage programming port’s ESD protection design is optimized. Final products pass the ESD testing and satisfy the project required.关键词
静电放电(ESD)/可编程只读存储器(PROM)/全芯片Key words
electro-static discharge( ESD)/programmable read-only memory( PROM)/whole-chip分类
数理科学引用本文复制引用
裴国旭,邓玉良,樊利慧,李晓辉,彭锦军..深亚微米大容量PROM芯片ESD保护技术[J].电子器件,2014,(4):587-590,4.
