电子器件Issue(5)：816-821,6.DOI:10.3969/j.issn.1005-9490.2014.05.004
一种多通道NAND Flash阵列的坏块管理方案
Bad Block Management Method of Multi-Channel NAND Flash Array
摘要
Abstract
Aiming at the requirement about the reliability of the multi-channel NAND Flash array,a bad block man-agement method is proposed. The method optimizes the bad block information storage and query methods. A FRAM stores the LBA-PBA address mapping table. The data of tests shows that the method can achieve multi-channel NAND Flash array of bad block management to ensure the reliability of storage. Optimized bad block creation method reduces the bad block query time. The FRAM saves the time of the valid block address mapping. And with the ferroelectric the reliability of data storage is further improved.关键词
大容量存储/坏块管理/二分法/NAND Flash阵列/FRAMKey words
large capacity storage/bad block management/dichotomy/NAND Flash array/FRAM分类
信息技术与安全科学引用本文复制引用
张雯,崔建杰,张新..一种多通道NAND Flash阵列的坏块管理方案[J].电子器件,2014,(5):816-821,6.基金项目
西安市科技计划基金项目(CXY1117[5]) （CXY1117[5]）
