电子器件Issue(6)：1026-1029,4.DOI:10.3969/j.issn.1005-9490.2014.06.003
10A/600 V大功率硅基JBS肖特基二极管的制备∗
Fabrication of High-Power 10 A/600 V Si-Based Junction Barrier Schottky(JBS) Diode
摘要
Abstract
To compensate the high leakage current and low reverse breakdown voltage of conventional Schottky di-ode,a JBS diode structure was formed by combining strip P+-N junction grids and Schottky junction,which termina-ted by seven floating field limiting rings( FGRs) and one cutoff ring structure. Simulation was utilized to determine the optimized parameters in fabrication,SBD and PiN diode were fabricated as contrast. The results showed that JBS diodes behave similar to SBD diodes in the on-state while reverse characteristics similar to PiN diodes. The obtained JBS diodes were capable of blocking up to 600 V when the leakage current density was less than 1×10-5 A/cm2,and the forward voltage drop at a current density of 80.6 A/cm2 is 1.1 V.关键词
肖特基二极管/结势垒肖特基二极管/栅条结构/场限环/反向耐压600VKey words
SBD diodes/JBS diodes/gridstructure/field guarding rings/breakdown voltage 600 V分类
信息技术与安全科学引用本文复制引用
陈菩祥,高桦,李海蓉,刘肃..10A/600 V大功率硅基JBS肖特基二极管的制备∗[J].电子器件,2014,(6):1026-1029,4.基金项目
甘肃省科技支撑计划项目(1204GKCA062) （1204GKCA062）
