电子器件Issue(6)：1049-1053,5.DOI:10.3969/j.issn.1005-9490.2014.06.008
一种新的SPICE BSIM3v3 HCI可靠性模型的建立及参数优化
A New SPICE BSIM3v3 HCI Reliability Model of MOSFET and Parameter Optimization
禹玥昀 1林宏 1赵同林 1狄光智 1石艳玲2
作者信息
- 1. 西南林业大学计算机与信息学院，昆明650224
- 2. 华东师范大学信息科技与技术学院，上海200062
- 折叠
摘要
Abstract
An innovative modeling method is presented for describing BSIM3v3 SPICE reliability model of MOSFET due to hot carrier injection. Seven main parameters associated with HCI are optimized in Original BSIM3v3 source code,and increased their relevant time modulating coefficient which can be acquired seven equations. In this work, 5 V operating voltage nMOSFET with 10 μm gate length and 0.5 μm gate width is prepared. The I-V simulation curve after parameters extraction fit the measured results very well,so an accurate new model of MOSFETs reliability model is achieved. Using the BSIM3v3 SPICE reliability model,the typical Idsat,Vth,Idlin,Gmax degradation as a func-tion of stress time is plotted( achieved) and the lifetime of MOSFETs can be evaluated.关键词
SPICE模型/BSIM3v3模型/热载流子注入( HCI)/可靠性/参数Key words
MOSFET/HCI/reliability/SPICE model/BSIM3v3 model分类
信息技术与安全科学引用本文复制引用
禹玥昀,林宏,赵同林,狄光智,石艳玲..一种新的SPICE BSIM3v3 HCI可靠性模型的建立及参数优化[J].电子器件,2014,(6):1049-1053,5.
