电子器件Issue(2)：236-239,4.DOI:10.3969/j.issn.1005-9490.2015.02.002
Bi-mode逆导门极换流晶闸管结构与特性研究
Bi-Mode Reverse Conducting Gate Commutated Thyristor Structure and Its Properties
谭巍 1李建清2
作者信息
- 1. 电子科技大学物理电子学院，成都610054
- 2. 电子科技大学物理电子学院，成都610054
- 折叠
摘要
Abstract
Bi-mode inverse to the gate commutated thyristor( BGCT) is a new uniform structure proposed to improve the current uniformity of the traditional reverse conducting gate commutated thyristor( RC-GCT) and the utilization rate of the effective area of the silicon chip. This paper studied the characteristics of layout structure of BGCT de-vice,the Sentaurus TCAD software simulation and analysis of BGCT,the traditional structure of RC-GCT and IGCT of traditional power device on state characteristics,the forward blocking characteristic and turn off characteristics, compares the differences of RC-GCT and BGCT in different operation temperature modes. Analysis on the character-istics of BGCT devices in this paper show that,research on the state characteristics of BGCT devices can improve RC-GCT device,and the utilization rate of the effective area of the silicon chip.关键词
门极换流晶闸管/逆导/Bi-mode/BGCT/版图布局Key words
gate commutated thyristor/reverse conducting/Bi-mode/BGCT/layout placement分类
信息技术与安全科学引用本文复制引用
谭巍,李建清..Bi-mode逆导门极换流晶闸管结构与特性研究[J].电子器件,2015,(2):236-239,4.
