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大功率IGBT驱动电路设计与应用∗

凤良燕 郑崇伟

电子器件Issue(2):343-347,5.
电子器件Issue(2):343-347,5.DOI:10.3969/j.issn.1005-9490.2015.02.023

大功率IGBT驱动电路设计与应用∗

Design and Application of High Power IGBT Drive Circuit

凤良燕 1郑崇伟2

作者信息

  • 1. 温州大学物理与电子信息工程学院,浙江 温州325035
  • 2. 浙江埃菲生能源科技有限公司,浙江 温州325035
  • 折叠

摘要

Abstract

As the basic component of power conversion device,IGBT( Insulated Gate Bipolar Transistor) stability and reliability affect the inverter’s performance directly,so a high requirement for drive circuit should be considered. A design proposal of drive circuit for 500 kW photovoltaic inverter was introduced on the base of topological graph and device type,especially studied design principles and some key issues how to drive and protect IG-BT. Lastly,com-bined with application,the reliability and rationality of drive circuit were analyzed and discussed through the given driving waveforms and inverter current waveforms.

关键词

光伏逆变器/IGBT/驱动电路/IGBT保护

Key words

PV-inverter/IGBT/drive circuit/IGBT protection

分类

信息技术与安全科学

引用本文复制引用

凤良燕,郑崇伟..大功率IGBT驱动电路设计与应用∗[J].电子器件,2015,(2):343-347,5.

基金项目

国家自然科学基金项目(51207112) (51207112)

电子器件

OA北大核心CSTPCD

1005-9490

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