电子器件Issue(3)：485-488,4.DOI:10.3969/j.issn.1005-9490.2015.03.003
H2稀释比对RF-PECVD制备a-Si：H/nc-Si：H薄膜的光电特性的影响
Influence of H2 Dilution on the Optical and Electronical Properties of a-Si:H/nc-Si:H Films Deposited by RF-PECVD
程自亮 1蒋向东 1王继岷 1刘韦颖 1连雪艳1
作者信息
- 1. 电子科技大学光电信息学院，成都610054
- 折叠
摘要
Abstract
The effect of H2 dilution on the microstructure optical and electronical properties of a-Si:H/nc-Si:H films was investigated. The films samples were fabricated by RF-PECVD using high purity SiH4 and H2/SiH4 mixed with a ratio gas as reaction gas sources in a circulatory way and tested by ultraviolet-visible-spectrometer,ellipsometer, Keithley 4200 and XRD. The results indicated that on the base of the nanoscale thickness a-Si:H film,with the ris-ing of H2 ( 99%, 97%, 95%, 92%, 80%) in the second reaction gas H2/SiH4 , the deposition rate reduce. In addition,energy gap,extinction coefficient and conductivity increase first and then decrease. Finally,the microscopic growing mechanism of the film was elucidated to explain the results of the experiment.关键词
a-Si:H/nc-Si:H/氢稀释/RF-PECVD(射频等离子体化学气相沉积)/光电性能/生长机理Key words
a-Si:H/nc-Si:H/Hydrogen dilution/RF-PECVD/optical and electronical properties/growing mechanis分类
通用工业技术引用本文复制引用
程自亮,蒋向东,王继岷,刘韦颖,连雪艳..H2稀释比对RF-PECVD制备a-Si：H/nc-Si：H薄膜的光电特性的影响[J].电子器件,2015,(3):485-488,4.
