电子器件Issue(3)：495-498,4.DOI:10.3969/j.issn.1005-9490.2015.03.005
超高压BCD工艺中多晶硅电阻的可靠性分析及实现
The Reliability Analyses and Implementation of Polysilicon Resistors in EHV BCD Process
包飞军 1曹刚 2葛艳辉 2石艳玲 1陈滔1
作者信息
- 1. 华东师范大学信息科技与技术学院，上海200241
- 2. 上海华虹宏力半导体制造有限公司，上海201206
- 折叠
摘要
Abstract
Temperature and current have great effects on polysilicon resistors. So,the reliability of polysilicon resis-tors used in EHV BCD should be specially analyzed. According to the test and analysis of the polysilicon resistors with different doping concentrations in 0. 18 μm 700 V BCD process combining with the theory of Joule heating effect,electromigration effect and polysilicon conductive mechanism,the effects of Joule heating and electromigration on polysilicon resistors have been analyzed. Then the methods were proposed to the implementation of polysilicon re-sistors with high reliability.关键词
超高压BCD/多晶硅电阻/可靠性/焦耳热效应/电迁移Key words
EHV BCD/polysilicon resistor/reliability/Joule heating effect/electromigration分类
信息技术与安全科学引用本文复制引用
包飞军,曹刚,葛艳辉,石艳玲,陈滔..超高压BCD工艺中多晶硅电阻的可靠性分析及实现[J].电子器件,2015,(3):495-498,4.
