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SOI温度补偿效应的全集成高线性度Gm-C滤波器设计

孙书龙 林敏

电子器件Issue(4):779-784,6.
电子器件Issue(4):779-784,6.DOI:10.3969/j.issn.1005-9490.2015.04.013

SOI温度补偿效应的全集成高线性度Gm-C滤波器设计

Realizationof SOI Fully Intergrated HighlyLinearity Gm-C Filter for Temperature Compensation

孙书龙 1林敏1

作者信息

  • 1. 中国科学院上海微系统与信息技术研究所,上海200050
  • 折叠

摘要

Abstract

A fully differential Operational Amplifier is proposed,which is adopted the voltage feedback technology to stablize the common mode output voltage,the Vth can be adjusted according to the substrate bias on the input differ-ential pairs,resulting in the change of the Gm of the amplifier as well as the cut-off frequency of the filter,which can be untilized to compensate the frequency offset caused by the temperature fly. The 3th order Chebyshev low pass fil-ter is complemented on the 0.13μm SOI GSMC technics,source voltage is 1.2 V and consists of 6 layermetals. The filter can achieve 0 dB voltage gain in the pass-band,8 MHz cut-off frequency -1 dB gain and 35 dB attenuation at 38 MHz,the ripple within band achieves 0.5 dB,when 1 MHz,400 mV Vpp sine signal applied into the circuit,the THD can reach -57 dB,and consumes 7 mW power from the source,In special application,it takes remarkable ad-vantage.

关键词

Gm-C滤波器/阈值漂移/衬底偏置/温度补偿

Key words

Gm-C filter/threshold voltage offset/substrate bias/temperature compensation

分类

信息技术与安全科学

引用本文复制引用

孙书龙,林敏..SOI温度补偿效应的全集成高线性度Gm-C滤波器设计[J].电子器件,2015,(4):779-784,6.

电子器件

OA北大核心CSTPCD

1005-9490

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