发光学报Issue(7)：795-799,5.DOI:10.3788/fgxb20143507.0795
硼对氮掺杂的p型ZnO薄膜的影响
Effect of Boron on Nitrogen Doped p-type ZnO Thin Films
摘要
Abstract
A stable and repeatable p-type ZnO is the key to realize the practical applications of photoe-lectric devices. Nitrogen has been considered as a possible acceptor dopant for p-type ZnO for a long time. However, the low solubility of nitrogen acceptor at oxygen site in ZnO is considered to be one of the main obstacles for p-type ZnO. In this paper, B/N co-doped p-type ZnO thin films were grown on sapphire substrate by plasma-assisted molecular beam epitaxy. The effect of boron on the nitrogen doping was studied by comparing with the single nitrogen doped thin films. X-ray photoelectron spectroscopy demonstrated there exists boron and B-N bond in the ZnO thin film. Compared to the single N-doped sample, B/N codoped samples present much higher carrier density. And the ZnO:(B,N) thin films show stable p-type conduction in two years. It is attributed to the increase of solubility of nitrogen accep-tor. It benefits from the strong B-N bonding and weak donor character of boron at zinc site. Boron will not bring strong compensation for acceptors. It suggests that boron is a good co-doping candidate for ni-trogen doped ZnO thin films.关键词
ZnO/B/N共掺/p型掺杂Key words
ZnO/B/N codoped/stable p-type conduction分类
数理科学引用本文复制引用
赵鹏程,申德振,张振中,姚斌,李炳辉,王双鹏,姜明明,赵东旭,单崇新,刘雷..硼对氮掺杂的p型ZnO薄膜的影响[J].发光学报,2014,(7):795-799,5.基金项目
国家“973冶计划(2011CB302002,2011CB302005) （2011CB302002,2011CB302005）
国家自然科学基金(11134009,11074248,11104265)资助项目 （11134009,11074248,11104265）
