发光学报Issue(7)：830-834,5.DOI:10.3788/fgxb20143507.0830
AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响
Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials
摘要
Abstract
AlGaN/AlN/GaN HEMT structures were grown on sapphire substrate by MOCVD with dif-ferent AlN growing time, and the influence of AlN thickness on electrical properties was investiga-ted. When AlN growth time is about 12 s corresponding to the AlN thickness of 1 ~1. 5 nm, the sample has the best performance of electrical properties with the lowest sheet resistance of 359 Ω· sq-1 , the highest 2DEG concentration of 1. 16í1013 cm-2 , and a high 2DEG mobility of 1 500 cm2 · V-1 ·s-1 . AFM results indicate that AlN layer within a certain thickness range has little influence on the surface morphology. HRXRD results show that AlGaN/AlN/GaN HEMT has a good hetero-structure interface.关键词
AlN厚度/PALE/MOCVD/HEMT/电学性能Key words
AlN thickness/PALE/MOCVD/HEMT/electrical properties分类
数理科学引用本文复制引用
钟林健,邢艳辉,韩军,陈翔,朱启发,范亚明,邓旭光,张宝顺..AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响[J].发光学报,2014,(7):830-834,5.基金项目
国家自然科学基金(61204011,11204009,61107026,61006084) （61204011,11204009,61107026,61006084）
国家自然科学基金重点基金(U103760) （U103760）
北京市自然科学基金(4142005)资助项目 （4142005）
