国防科技大学学报Issue(1)：34-38,5.DOI:10.11887/j.cn.201501006
透明栅控SOI薄膜横向PIN光电探测器的光电特性
Optical characteristics for thin-film gated SOI lateral PIN photodetector
摘要
Abstract
Thin-film gated silicon-on-insulator (SOI)lateral PIN photodetector is a novel photodetector,based on standard SOI technology and CMOS process,combining the conventional bipolar and field effect photosensitive device structure.The basic structure of this novel photodetector is described and the operation principle is analyzed.Applying physical equations of semiconductor device,the gate voltage and photocurrent models can be built.Two-dimensional numerical simulations are performed in SILVACO software.In the middle-short wavelength operation period,the output photocurrent increases with gate voltage,with the obvious gated-control characteristics.Under fully depleted condition,the internal quantum efficiency can yield over 96%,even near 100% for the varied wavelengths(400nm,450nm,530nm,600nm).For short wavelengths(280nm, 350nm),the internal quantum efficiency is relatively lower,the maximum is approximately 80%.And the dark current of this photodetector is low,leading to a high ratio of more than 106 between illuminated to dark current,achieving high sensitivity.关键词
栅控/绝缘体上硅/光电探测器/光学特性Key words
gated-control/silicon-on-insulator/photodetector/optical characteristics分类
信息技术与安全科学引用本文复制引用
李国立,曾云,夏宇,徐慧..透明栅控SOI薄膜横向PIN光电探测器的光电特性[J].国防科技大学学报,2015,(1):34-38,5.基金项目
国家自然科学基金资助项目 （）
