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线形同轴耦合微波等离子体诊断及硅薄膜制备

李慧 吴爱民 张文兰 陆文琪 秦福文 董闯

哈尔滨工程大学学报Issue(3):423-426,4.
哈尔滨工程大学学报Issue(3):423-426,4.DOI:10.3969/j.issn.1006-7043.201311019

线形同轴耦合微波等离子体诊断及硅薄膜制备

Diagnosis of linearly coaxially coupled microwave plasma and preparation of silicon thin films

李慧 1吴爱民 1张文兰 2陆文琪 3秦福文 4董闯5

作者信息

  • 1. 大连理工大学 材料科学与工程学院,辽宁 大连 116024
  • 2. 大连理工大学 三束材料改性教育部重点实验室,辽宁 大连116024
  • 3. 大连理工大学 常州研究院,江苏 常州213164
  • 4. 大连理工大学 物理与光电工程学院,辽宁 大连116024
  • 5. 大连理工大学 三束材料改性教育部重点实验室,辽宁 大连116024
  • 折叠

摘要

Abstract

A new type of large area linearly coaxially coupled microwave plasma source has been developed. In order to obtain the plasma density and its special distribution of this new type of plasma source, Langmuir probe method is used to diagnose the discharge characteristics of the source under different discharge parameters. Three elements, in⁃cluding influence of microwave power, total gas flow ( the discharge gas is the mixture of hydrogen and argon gases, while the flow ratio of hydrogen and argon gases is 3∶ 1) and the distance Z from the quartz tube were used to design orthogonal experiment. Therefore, the influence of macroscopic discharge parameters on plasma parameters is studied. The test result showed that the electron density of the plasma is above 1010 cm-3 . The horizontal distributions of plasma parameters at the position 14 cm away from the quartz tube were diagnosed to get the best region of films deposition. At last the silicon thin films were deposited according to the plasma diagnosis. An X⁃ray diffraction ( XRD) spectrum shows silicon films of deposition are polycrystalline silicon thin films and the Raman spectra results revealed that the crystalline ratio of the films is above 92% and the deposition rate of the films is about 8 nm/min.

关键词

线形同轴耦合微波等离子体/等离子体诊断/电子密度/多晶硅薄膜/拉曼/XRD

Key words

linearly coaxially coupled microwave plasma/plasma diagnosis/electron density/polycrystalline silicon thin films/Raman spectra/X-ray diffraction (XRD)

分类

信息技术与安全科学

引用本文复制引用

李慧,吴爱民,张文兰,陆文琪,秦福文,董闯..线形同轴耦合微波等离子体诊断及硅薄膜制备[J].哈尔滨工程大学学报,2015,(3):423-426,4.

基金项目

江苏省自然科学基金资助项目( BK2011252);常州市工业支撑计划资助项目( CE20110012);中央高校基本科研业务费专项资金资助项目( DUT13JN08,DUT12JN02). ()

哈尔滨工程大学学报

OA北大核心CSCDCSTPCD

1006-7043

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