航空兵器Issue(1)：49-51,3.
中波 InAs／GaSb 超晶格红外焦平面探测器
InAs/GaSb Superlattices Mid-Wavelength Infrared Focal Plane Array Detectors
摘要
Abstract
The GaSb-based InAs/GaSb superlattices grown by molecular beam epitaxy ( MBE ) with high uniformity of materials has obvious advantages in the fabrication of infrared focal plane array ( FPA) detectors.By the growth interrupt and the surface mobility enhancement methods of molecular beam epi-taxial growth , mid-wavelength InAs/GaSb infrared superlattices material for detectors are grown on GaSb substrate respectively .The comparison shows that for mid-wavelength superlattices materials , the growth interrupt method is better than the surface mobility enhancement method .The PIN photodiodes is made , the focal plane array of 320 ×256 pixel is fabricated .关键词
InAs/GaSb超晶格/红外焦平面探测器/分子束外延Key words
InAs/GaSb superlattices/infrared focal plane array detector/molecular beam epitaxy分类
信息技术与安全科学引用本文复制引用
向伟,王国伟,徐应强,郝宏玥,蒋洞微,任正伟,贺振宏,牛智川..中波 InAs／GaSb 超晶格红外焦平面探测器[J].航空兵器,2015,(1):49-51,3.基金项目
航空科学基金资助项目（20122436001）；国家自然科学基金资助项目 （）
