红外技术Issue(2)：105-109,5.
分子束外延锗基碲镉汞薄膜原位砷掺杂研究
Research on In-situ As-doped HgCdTe Thin Film Growth on Ge-base by MBE
摘要
Abstract
This paper reports the result of in-situ As-doped HgCdTe thin film growth on Ge-base by MBE. It mainly reseaches on controlling the temperature of As-doped HgCdTe thin film, and analyzes the relationship between the crystal quality and the As-flux. It has been achieved the relationship between the temperatures of effusion cells and impurity concentration which was analyzed by SIMS; FTIR, X-ray and EPD are used to character the quality of the crystal, and the result shows that the HgCdTe thin film with good crystal quality and low defect density could be grown by MBE; More efforts were carried on the existing annealing of As-impurity, as well as the electronic parameters with different annealing temperatures.关键词
分子束外延/碲镉汞/原位As掺杂/退火Key words
molecular beam epitaxy/HgCdTe/in-situ As-doping/annealing分类
信息技术与安全科学引用本文复制引用
覃钢,李东升,李艳辉,杨春章,周旭昌,张阳,谭英,左大凡,齐航..分子束外延锗基碲镉汞薄膜原位砷掺杂研究[J].红外技术,2015,(2):105-109,5.基金项目
核高基项目。 （）
