红外技术Issue(4)：315-321,322,8.
N2对碲镉汞干法刻蚀诱导损伤的影响
The Effect of N2 for Dry Etching Induced Damage of HgCdTe
摘要
Abstract
This article reports some researches of etch induced damage on HgCdTe. Since in the dry etching process, the main etchant is CH4/H2, the cleavage resulting H is easily diffused into the interior of the material to change the electrical properties of the material, which will cause the etching induced damage. By introducing a certain amount of N2, which can suppress the change of the electrical properties of the material.关键词
碲镉汞/干法刻蚀/诱导损伤/N2Key words
HgCdTe/dry etching/induced damage/N2分类
信息技术与安全科学引用本文复制引用
龚晓丹,韩福忠..N2对碲镉汞干法刻蚀诱导损伤的影响[J].红外技术,2015,(4):315-321,322,8.
