华中科技大学学报（自然科学版）Issue(10)：5-9,5.DOI:10.13245/j.hust.141002
铜基石墨烯的CVD法制备工艺参数研究
Study on fabrication parameter of graphene on copper by CVD
摘要
Abstract
T he effects of concentration and deposition time on nucleation density ,grow th rate and the coverage fraction of single layer graphene were discussed with ethyne as the precursor of activated car-bon .The nucleation ,grain growth ,and ending phenomenon were displayed by hot plate method .It is found that with the decrease of ethyne concentration ,the bigger the graphene grain size ,the bigger the area of multi-layer graphene ,w hich is mainly composed of double layer graphene .During the dep-osition process ,the hydrogen not only can assist the break-dow n of hydrocarbon ,but also can etch parts of nucleation sites ,and then promotes the graphene quality .Based on the tradeoff between the single layer ratio and grain size of graphene ,the optimized process parameter with the ethyne/mixing gas (φ(H2 )∶ φ(Ar)=1∶9) ratio of 5∶100 is used for the fabrication and graphene with transparency of 97 .1% ,low defect density ,and mainly composed of single layer graphene is obtained .关键词
石墨烯/CVD生长/铜/碳源浓度/热板法Key words
graphene/CVD(chemical vapor deposition) growth/copper/ethyne concentration/hot plate method分类
信息技术与安全科学引用本文复制引用
杨连乔,冯伟,王浪,张建华..铜基石墨烯的CVD法制备工艺参数研究[J].华中科技大学学报（自然科学版）,2014,(10):5-9,5.基金项目
国家重点基础研究发展计划资助项目（2011CB013100）． （）
