金刚石与磨料磨具工程Issue(4)：11-14,20,5.DOI:10.13394/j.cnki.jgszz.2014.4.0003
低浓度氮气对 MPCVD 法制备金刚石膜的影响
Influence of low N2 concentration on growth of diamond films by MPCVD
张莹 1汪建华 1熊礼威 1吕琳1
作者信息
- 1. 武汉工程大学材料科学与工程学院，湖北省等离子体化学与新材料重点实验室，湖北 武汉 430074
- 折叠
摘要
Abstract
Diamond films deposition were implemented through microwave plasma chemical vapor deposition (MPCVD)method using mixed gas of CH 4/H 2/N2 .Influence of N2 on diamond films was studied in detail.Scanning electron microscope (SEM),laser Raman spectroscopy and X-ray diffraction (XRD)were used to observe the surface morphology,the phase composition and the crystal orientation of diamond films.Results showed that the content of amorphous diamond phase in the film increased with the enlargement of N2 volume concentration (from 0% to 6%),but the diamond grain size presented a downward trend.Meanwhile, the crystal orientation of larger (1 1 1 ) crystal plane transforms into smaller (100 )crystal plane.It is more conducive to obtain diamond films with high (100)crystal plane under a relatively low N2 concentration(about 2%),while it turns up a kind of"cauliflower" structure when N2 concentration was 4%.关键词
微波等离子体化学气相沉积/金刚石薄膜/氮气Key words
microwave plasma chemical vapor deposition/diamond film/nitrogen分类
化学化工引用本文复制引用
张莹,汪建华,熊礼威,吕琳..低浓度氮气对 MPCVD 法制备金刚石膜的影响[J].金刚石与磨料磨具工程,2014,(4):11-14,20,5.
