吉首大学学报（自然科学版）Issue(3)：32-34,3.DOI:10.3969/j.cnki.jdxb.2015.03.008
掺杂氮化铝中局域磁矩的第一性原理计算
A First Principle Study of Local Magnetic Moment on Non-Magnetic Elements Doped AlN
摘要
Abstract
The ideal diluted magnetic semiconductors has favorable room‐temperature ferromagnetism .Al‐though AlN diluted magnetic semiconductor has wide band gap and good light‐admitting quality ,it has not been widely applied due to the unsatisfactory replicability of the experiment .Based on first principle of the density functional theory ,we calculate the electric structure of AlN semiconductors doped by B el‐ement .The analysis of the calculated electric structure displays that an evident local magnetic moment change arises on doped AlN semiconductors .T he magnitude of the local magnetic moment is 2 μB .关键词
稀磁半导体/氮化铝(AlN)/第一性原理Key words
diluted magnetic semiconductors/AlN/first principle分类
数理科学引用本文复制引用
杨红,全秀娥..掺杂氮化铝中局域磁矩的第一性原理计算[J].吉首大学学报（自然科学版）,2015,(3):32-34,3.基金项目
湖南省教育厅科学研究项目（14C0939）；吉首大学引进博士人才资助项目（jsdxrcyjkyxm201309）；吉首大学教改课题资助项目 （）
