计算机工程与应用Issue(19)：42-46,5.DOI:10.3778/j.issn.1002-8331.1311-0005
多频段功率可控的CMOS开关类功率放大器设计
Design of multi-band CMOS switching power amplifier with power control
摘要
Abstract
Switching power amplifier has higher efficiency than the traditional linear power amplifier. Class-E power amplifier is widely used because of its relatively higher efficiency and easier implementation, but it cannot achieve adequate output power and efficiency at low frequency. Class-E type matching is utilized at higher band(433 MHz)while the ampli-fier is matched in a novel square wave way at lower(315 MHz, 230 MHz)band. The simulation and layout are based on Cadence software, the designed amplifier can achieve 20 dBm output power with 40% drain efficiency over the entire bands using the same on-chip circuits. At the same time, the output power can be digitally controlled by changing the width of the output transistor.关键词
多频段/功率可控/金属氧化为半导体/开关类/功率放大器Key words
multi-band/power control/CMOS/switched/power amplifier分类
信息技术与安全科学引用本文复制引用
颜永红,谌昊,樊晓华,刘昱,曾云..多频段功率可控的CMOS开关类功率放大器设计[J].计算机工程与应用,2014,(19):42-46,5.基金项目
湖南省自然科学基金重点项目（No.11JJ2034）。 （）
